DocumentCode
1073592
Title
Single-device-well MOSFET´s
Author
Hamdy, Esmat Z. ; Elmasry, Mohamed I. ; El-Mansy, Youssef A.
Volume
28
Issue
3
fYear
1981
fDate
3/1/1981 12:00:00 AM
Firstpage
322
Lastpage
327
Abstract
A novel MOSFET structure based on merging a surface enhancement-type device and a buried depletion-type device in a Single Device Well (SDW) is described. The SDW MOSFET structure utilizes the inherent two-dimensional geometry of a MOSFET device well to obtain two devices perpendicular to each other, having the same gate, thereby utilizing the hitherto nonutilized volume of the well. The two perpendicular currents of the devices in the merged structure are analyzed. An analytical model is developed and circuit CAD simulations are performed. A test chip is fabricated and the structure performance is evaluated. Some circuit examples are given.
Keywords
Analytical models; CMOS technology; Geometry; Isolation technology; MOSFET circuits; Merging; Permittivity; Semiconductor impurities; Substrates; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20335
Filename
1481487
Link To Document