• DocumentCode
    1073614
  • Title

    Comparative frequency behavior of GaAs, InP, and GaInAs transferred electron devices—Derivation of a simple comparative criterion

  • Author

    Rolland, P.A. ; Salmer, G. ; Constant, E. ; Fauquembergue, R.

  • Author_Institution
    Universite des Sciences et Techniques de Lille 1, Villeneuve d´´Ascq Cedex, France
  • Volume
    28
  • Issue
    3
  • fYear
    1981
  • fDate
    3/1/1981 12:00:00 AM
  • Firstpage
    341
  • Lastpage
    343
  • Abstract
    A comparison between the intrinsic frequency dependence of transferred electron effects in GaAs, InP, and GaInAs is presented. A simple, comparative, criterion is then derived on the basis of phenomenological Considerations.
  • Keywords
    Cutoff frequency; Electron mobility; Frequency dependence; Gallium arsenide; Gunn devices; Indium phosphide; Monte Carlo methods; Radio frequency; Semiconductor materials; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20337
  • Filename
    1481489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073614