DocumentCode
1073723
Title
Influence of Mg doping on cutoff frequency and light output of InGaAsP/InP heterojunction LED´s
Author
Grothe, Helmut ; Proebster, Walter
Author_Institution
Technische Universität München, München, Germany
Volume
28
Issue
4
fYear
1981
fDate
4/1/1981 12:00:00 AM
Firstpage
371
Lastpage
373
Abstract
InGaAsP/InP luminescent diodes with modulation bandwidths from 450 MHz to 1.2 GHz at 1.27-µm wavelength can be realized as heterojunction structures with a strongly Mg-doped active region. The inflaence of Mg content in the melt and active layer width on cutoff frequency, total light output power, and power-bandwidth product is investigated. Using previous theoretical results, the relative acceptor concentration of the Mg-doped InGaAsP layers is evaluated from the measured bandwidth of the devices. Absolute values are obtained from Hall measurements.
Keywords
Bandwidth; Cutoff frequency; Doping; Electrons; Heterojunctions; Indium phosphide; Light emitting diodes; Optical modulation; Power generation; Wavelength measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20348
Filename
1481500
Link To Document