Title :
Degradation induced formation of extended defects in GaP:N LED´s
Author :
Ferenczi, George
Author_Institution :
Hungarian Academy of Sciences, Budapest, Ujpest, Hungary
fDate :
4/1/1981 12:00:00 AM
Abstract :
The light output degradation of commercial VPE GaP:N LED´s was studied by monitoring minority carrier lifetime and deep level spectra. It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T6. T6is identified as a vacancy cluster, a model suggested by the formation-annihilation properties of this deep level.
Keywords :
Charge carrier lifetime; Current density; Degradation; Diodes; Helium; Liquid crystals; Monitoring; Performance evaluation; Radiative recombination; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20358
