DocumentCode
1073838
Title
GaAs/GaAlAs diode lasers with angled pumping stripes
Author
Scifres, D.R. ; Streifer, W. ; Burnham, R.D.
Author_Institution
Xerox Palo Alto Research Center, Palo Alto, CA
Volume
14
Issue
4
fYear
1978
fDate
4/1/1978 12:00:00 AM
Firstpage
223
Lastpage
227
Abstract
Operation of DH GaAs/GaAlAs stripe contact lasers with stripes oriented nonorthogonally to the cleaved end facets of the laser is described. Such lasers, with misalignment angles of 
, do not exhibit "kinking" behavior to power levels greater than 90 mW/facet, and do not exhibit relaxation oscillations under pulsed operation. Data showing the dependence of laser wavelength, spectral half-width, transverse mode structure, facet reflectivity, and output beam angle on both stripe angle and pump current level are also presented.
, do not exhibit "kinking" behavior to power levels greater than 90 mW/facet, and do not exhibit relaxation oscillations under pulsed operation. Data showing the dependence of laser wavelength, spectral half-width, transverse mode structure, facet reflectivity, and output beam angle on both stripe angle and pump current level are also presented.Keywords
DH-HEMTs; Diode lasers; Gallium arsenide; Laser beams; Laser excitation; Laser modes; Optical pulses; Power lasers; Pump lasers; Reflectivity;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1978.1069780
Filename
1069780
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