DocumentCode :
1073838
Title :
GaAs/GaAlAs diode lasers with angled pumping stripes
Author :
Scifres, D.R. ; Streifer, W. ; Burnham, R.D.
Author_Institution :
Xerox Palo Alto Research Center, Palo Alto, CA
Volume :
14
Issue :
4
fYear :
1978
fDate :
4/1/1978 12:00:00 AM
Firstpage :
223
Lastpage :
227
Abstract :
Operation of DH GaAs/GaAlAs stripe contact lasers with stripes oriented nonorthogonally to the cleaved end facets of the laser is described. Such lasers, with misalignment angles of 
, do not exhibit "kinking" behavior to power levels greater than 90 mW/facet, and do not exhibit relaxation oscillations under pulsed operation. Data showing the dependence of laser wavelength, spectral half-width, transverse mode structure, facet reflectivity, and output beam angle on both stripe angle and pump current level are also presented.
, do not exhibit "kinking" behavior to power levels greater than 90 mW/facet, and do not exhibit relaxation oscillations under pulsed operation. Data showing the dependence of laser wavelength, spectral half-width, transverse mode structure, facet reflectivity, and output beam angle on both stripe angle and pump current level are also presented.Keywords :
DH-HEMTs; Diode lasers; Gallium arsenide; Laser beams; Laser excitation; Laser modes; Optical pulses; Power lasers; Pump lasers; Reflectivity;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1978.1069780
Filename :
1069780
Link To Document :
