• DocumentCode
    1073845
  • Title

    Electroluminescence by impact excitation in ZnS:Mn and ZnSe:Mn Schottky diodes

  • Author

    Gordon, Neil T.

  • Author_Institution
    University of St. Andrews, Fife, Scotland
  • Volume
    28
  • Issue
    4
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    434
  • Lastpage
    436
  • Abstract
    Measurements have been made of the variation of the quantum efficiency of electroluminescence as a function of applied field in ZnS:Mn and ZnSe:Mn Schottky diodes. Under very high fields, the quantum efficiency unexpectedly reaches a maximum and then drops. An explanation is proposed which depends on the details of the band structures of ZnS and ZnSe.
  • Keywords
    Electroluminescence; Electrons; Impact ionization; Impurities; Luminescence; Manganese; Schottky barriers; Schottky diodes; Spontaneous emission; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20361
  • Filename
    1481513