Title :
Electroluminescence by impact excitation in ZnS:Mn and ZnSe:Mn Schottky diodes
Author_Institution :
University of St. Andrews, Fife, Scotland
fDate :
4/1/1981 12:00:00 AM
Abstract :
Measurements have been made of the variation of the quantum efficiency of electroluminescence as a function of applied field in ZnS:Mn and ZnSe:Mn Schottky diodes. Under very high fields, the quantum efficiency unexpectedly reaches a maximum and then drops. An explanation is proposed which depends on the details of the band structures of ZnS and ZnSe.
Keywords :
Electroluminescence; Electrons; Impact ionization; Impurities; Luminescence; Manganese; Schottky barriers; Schottky diodes; Spontaneous emission; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20361
