DocumentCode
1073845
Title
Electroluminescence by impact excitation in ZnS:Mn and ZnSe:Mn Schottky diodes
Author
Gordon, Neil T.
Author_Institution
University of St. Andrews, Fife, Scotland
Volume
28
Issue
4
fYear
1981
fDate
4/1/1981 12:00:00 AM
Firstpage
434
Lastpage
436
Abstract
Measurements have been made of the variation of the quantum efficiency of electroluminescence as a function of applied field in ZnS:Mn and ZnSe:Mn Schottky diodes. Under very high fields, the quantum efficiency unexpectedly reaches a maximum and then drops. An explanation is proposed which depends on the details of the band structures of ZnS and ZnSe.
Keywords
Electroluminescence; Electrons; Impact ionization; Impurities; Luminescence; Manganese; Schottky barriers; Schottky diodes; Spontaneous emission; Zinc compounds;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20361
Filename
1481513
Link To Document