DocumentCode
1073895
Title
Definition and Use of a Specific Value to Characterize the Dielectric Breakdown of Thin Insulating Layers
Author
Lacoste, R. ; Muhammad, A. ; Segui, Y. ; Voumbo-Matoumona, L.
Author_Institution
Laboratoire de Génie Electrique associe au C.N.R.S. Université Paul Sabatier Toulouse, France
Issue
3
fYear
1984
fDate
6/1/1984 12:00:00 AM
Firstpage
234
Lastpage
240
Abstract
Starting from the assumption that ¿conditioning¿ is necessary to trigger a breakdown and that its duration can be seen as the delay time before breakdown, a new approach to the problem of the dielectric stress of solid insulators is proposed. It is founded on the relationship existing between the delay time which is determined statistically, and the amplitude of the electrical field. The experiments deal with a few hundred nm thick layers of silicon oxide, alumina, and polystyrene, coated with self-healing electrodes to which successive voltages of different amplitudes are applied. The delay time is determined either by ¿i, i.e. the lag time between two consecutive breakdowns, or by ti, time during which the material has been under stress before the ith breakdown. The variations, as a function of field G, of the mean value ¿m of ¿i, or of t¿ inferred from Weibull statistical model applied to ti, yield an asymptotic value Gc for which the ¿conditioning¿ duration tends to infinity. By identifying the curve ¿m(G) with an expression such as ¿m = a/(G-Gc)¿, the three constants ¿, ¿ and Gc are calculated, the latter representing a ¿specific breakdown field¿; t¿(G) may give a similar definition. An example of the use of such a criterion is its variation as function of the sample thickness.
Keywords
Delay effects; Dielectric breakdown; Dielectrics and electrical insulation; Electric breakdown; Electrodes; H infinity control; Silicon; Solids; Stress; Voltage;
fLanguage
English
Journal_Title
Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
0018-9367
Type
jour
DOI
10.1109/TEI.1984.298754
Filename
4081237
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