Two-dimensional simulation of a high-voltage p-i-n diode with overhanging metallization

A two-dimensional computer simulation of a high-voltage p-i-n diode for a microstrip phase shift network mounted in parallel with a microstrip line has been carried out. The electric field distribution in four different device Structures has been analyzed. It is shown that the microstrip line which forms a metal overhang on top of the device can reduce its breakdown voltage due to enhanced total and normal field components at the silicon-dielectric interface. Also, this could lead to avalanche injection of hot carriers into the dielectric which could impair the long-term performance of the device. A structure which should prove less prone to these adverse effects is reported.