• DocumentCode
    1074152
  • Title

    A high brightness GaP multicolor LED

  • Author

    Yamaguchi, Takao ; Niina, T. ; Niina, Tatsuhiko

  • Author_Institution
    Sanyo Electric Company, Osaka, Japan
  • Volume
    28
  • Issue
    5
  • fYear
    1981
  • fDate
    5/1/1981 12:00:00 AM
  • Firstpage
    588
  • Lastpage
    592
  • Abstract
    A multicolor LED which can emit red, green, and any other colored light between red and green, such as orange and yellow, has been developed. This new LED is fabricated by growing epitaxially a double junction of red and green light emission on one side of a GaP substrate. The four epitaxial layers of GaP, referred to as n1, p1, p2, and n2, are grown by liquid phase epitaxy on the
  • Keywords
    Brightness; Displays; Epitaxial growth; Epitaxial layers; Etching; Light emitting diodes; Metalworking machines; Substrates; Tellurium; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20387
  • Filename
    1481539
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1074152