• DocumentCode
    1074201
  • Title

    Enhancement of breakdown voltages of Schottky diodes with a tapered window

  • Author

    Choi, Yearn-Ik

  • Author_Institution
    The Korea Advanced Institute of Science, Seoul, Korea
  • Volume
    28
  • Issue
    5
  • fYear
    1981
  • fDate
    5/1/1981 12:00:00 AM
  • Firstpage
    601
  • Lastpage
    602
  • Abstract
    Aluminum-silicon Schottky diodes with a tapered window have been fabricated using graded etching of SiO2. The breakdown voltages have been drastically increased to 130 V in comparison with 30 V for unguarded Schottky diodes.
  • Keywords
    Artificial intelligence; Electric breakdown; Electrons; Etching; Leakage current; Low voltage; P-n junctions; Schottky diodes; Silicon; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20392
  • Filename
    1481544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1074201