• DocumentCode
    107439
  • Title

    Domain-Specific Many-core Computing using Spin-based Memory

  • Author

    Venkatesan, R. ; Chippa, Vinay K. ; Augustine, Charles ; Roy, Kaushik ; Raghunathan, Anand

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    13
  • Issue
    5
  • fYear
    2014
  • fDate
    Sept. 2014
  • Firstpage
    881
  • Lastpage
    894
  • Abstract
    Spin-based devices have shown great potential in enabling high-density, energy-efficient memory and are therefore, considered highly promising for the design of future computing platforms. While the impact of spin-based devices on general-purpose computing platforms has been studied, they are yet to be explored in the context of domain-specific computing, where the characteristics of the devices can be matched to application characteristics through architectural customization, so as to maximize the benefits. We present the design and evaluation of a many-core domain-specific processor for the emerging application domains of Recognition and Mining (RM) using spin-based memories. The domain-specific processor has a two-level on-chip memory hierarchy consisting of a streaming access first-level memory and a random access second-level memory. Based on the memory access characteristics, we suggest the use of Domain Wall Memory (DWM) and Spin Transfer Torque Magnetic RAM (STT-MRAM) to realize the first and second levels, respectively. We develop architectural models of DWM and STT-MRAM, and use them to evaluate the proposed design and explore various architectural tradeoffs in the domain-specific processor. We evaluate the proposed design by comparing it to a CMOS-based baseline at the same technology node. For three representative RM algorithms (support vector machine, k-means clustering, and generalized learning vector quantization), the spin-memory-based design achieves an energy-delay product improvement of 1.5 ×-4 × over the CMOS baseline at iso-area. Our results suggest that spin-based memory technologies can enable significant improvements in energy efficiency and performance for highly parallel, data-intensive workloads. Our study also highlights the importance of synergistic architectural exploration along with the use of emerging devices rather than simply considering them as drop-in replacements.
  • Keywords
    multiprocessing systems; random-access storage; CMOS baseline; CMOS-based baseline; DWM; RM algorithms; STT-MRAM; architectural customization; data-intensive workloads; domain wall memory; domain-specific computing; domain-specific many-core computing; energy efficiency; energy-delay product improvement; energy-efficient memory; first-level memory; general-purpose computing platforms; generalized learning vector quantization; iso-area; k-means clustering; many-core domain-specific processor; memory access characteristics; on-chip memory hierarchy; random access second-level memory; spin transfer torque magnetic RAM; spin-based devices; spin-based memory technologies; spin-memory-based design; support vector machine; synergistic architectural exploration; Computer architecture; Context; Magnetic tunneling; Magnetization; Phase change random access memory; System-on-chip; Domain-specific computing; many-core processor; spin-based memory;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2014.2306958
  • Filename
    6744659