Title :
"Bipolar-mode" transistors on a voltage-controlled scheme
Author :
Tamama, Teruo ; Sakaue, Masahiro ; Mizushima, Yoshihiko
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
7/1/1981 12:00:00 AM
Abstract :
A buried-gate vertical JFET (BVFET) operated under forward gate bias shows saturating or nonsaturating drain current characteristics simply by Changing the channel cross section area. BVFET with a proper channel cross section has similar characteristics to a "bipolar-mode" SIT (BSIT) or a depleted base transistor (DBT). A generalized picture is derived relating these forward-biased JFET\´s to the conventional bipolar transistor (BPT). Analysis of BVFET has proved that the operation of BSIT is completely the same as that of BPT with its base voltage controlled. The current saturation mechanism is discussed in detail in this paper.
Keywords :
Analytical models; Bipolar transistors; Capacitance; Conductivity; Dielectric constant; Electron mobility; Impurities; Telegraphy; Telephony; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20430
