• DocumentCode
    107464
  • Title

    Performance and Robustness of 3-D Integrated SRAM Considering Tier-to-Tier Thermal and Supply Crosstalk

  • Author

    Yueh, Wen ; Chatterjee, Saptarshi ; Trivedi, Amit Ranjan ; Mukhopadhyay, Saibal

  • Author_Institution
    School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
  • Volume
    3
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    943
  • Lastpage
    953
  • Abstract
    This paper analyzes the effect of tier-to-tier thermal and supply crosstalk on the performance and robustness of the static random access memory (SRAM) within a 3-D stack under crosstalk influence of the logic cores. Our framework integrates distributed process variation aware circuit analysis, RC-based thermal simulation, and distributed RLC-based power delivery network simulation. The analysis shows when the logic cores and SRAMs are integrated in 3-D stack, the thermal and supply crosstalk degrade the SRAM performance and noise margin during read and write operations.
  • Keywords
    3-D core-memory stack; 3-D integration; die-to-die thermal and supply crosstalk; hotspots; power delivery network (PDN); robustness; static random access memory (SRAM); supply noise; through silicon via (TSV);
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2012.2236650
  • Filename
    6487391