DocumentCode :
107464
Title :
Performance and Robustness of 3-D Integrated SRAM Considering Tier-to-Tier Thermal and Supply Crosstalk
Author :
Yueh, Wen ; Chatterjee, Saptarshi ; Trivedi, Amit Ranjan ; Mukhopadhyay, Saibal
Author_Institution :
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
Volume :
3
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
943
Lastpage :
953
Abstract :
This paper analyzes the effect of tier-to-tier thermal and supply crosstalk on the performance and robustness of the static random access memory (SRAM) within a 3-D stack under crosstalk influence of the logic cores. Our framework integrates distributed process variation aware circuit analysis, RC-based thermal simulation, and distributed RLC-based power delivery network simulation. The analysis shows when the logic cores and SRAMs are integrated in 3-D stack, the thermal and supply crosstalk degrade the SRAM performance and noise margin during read and write operations.
Keywords :
3-D core-memory stack; 3-D integration; die-to-die thermal and supply crosstalk; hotspots; power delivery network (PDN); robustness; static random access memory (SRAM); supply noise; through silicon via (TSV);
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2012.2236650
Filename :
6487391
Link To Document :
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