Noise modeling in submicrometer-gate FET´s

A novel and simple noise model for submicrometer-gate FET´s is proposed. It takes into account the nonstationary electron dynamics effects which are of great importance for submicrometer-gate FET´s. This model, which allows us to evaluate the noise figure of intrinsic FET, is described, as well as the method which has been used to take into account the influence of parasitic elements. A comparison between theoretical predictions and experimental results demonstrates the validity of this model. Some significant results are given, concerning for instance, the contributions of the different channel sections to the output noise and the influences of both the gate length and parasitic elements on the noise performances.