Title :
Low leakage current GaAs diodes
Author :
Loh, K.W. ; Schroder, D.K. ; Clarke, R.C. ; Rohatgi, A. ; Eldridge, G.W.
Author_Institution :
Westinghouse R&D Center, Pittsburgh, PA
fDate :
7/1/1981 12:00:00 AM
Abstract :
Diodes were formed by Mg ion implantation into n-epitaxial GaAs layers on n+Substrates. Deep level transient spectroscopy (DLTS) measurements gave trap densities around 1012cm-3in the epilayers. The reverse-biased junction currents were in the low-to-mid 10-9A/cm2range at 10-V bias and the diodes had breakdown voltages as high as 250 V.
Keywords :
Annealing; Degradation; Diodes; Gallium arsenide; Image storage; Leakage current; Signal to noise ratio; Substrates; Temperature; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20433
