Temperature dependent study of carbon-doped InP/InGaAs HBT´s

Author

Kruse, J. ; Mares, P.J. ; Scherrer, D. ; Feng, M. ; Stillman, G.E.

Author_Institution

Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA

Volume

17

Issue

1

fYear

1996

Firstpage

10

Lastpage

12

Abstract

We report on a temperature dependent study of the dc and the microwave performance of carbon-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBT´s). The turn on voltage increased 114% and the dc current gain decreased 25% as the temperature was reduced from 300 K to 33 K. Under high-current injection, there was a 29% increase in the current gain cutoff frequency of these devices as the temperature was lowered from 300 K to 77 K. By investigating the operation of HBT´s at cryogenic temperatures, increased understanding of the mechanisms of carrier transport in these devices can be obtained, and this may lead to improvements in device performance.

Keywords

III-V semiconductors; S-parameters; carbon; cryogenic electronics; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; 33 to 300 K; HBTs; InP-InGaAs; carrier transport; cryogenic temperatures; current gain cutoff frequency; dc current gain; heterojunction bipolar transistors; high-current injection; microwave performance; temperature dependent study; turn on voltage; Circuits; Cryogenics; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Performance gain; Temperature dependence; Temperature measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.475561

Filename

475561