An analytical model for minimum drift region length of SOI RESURF diodes

Author

Chung, Sang-Koo ; Han, Seung-Youp ; Shin, Jin-Cheol ; Yearn-Ik Choi ; Kim, Sang-Bae

Author_Institution

Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea

Volume

17

Issue

1

fYear

1996

Firstpage

22

Lastpage

24

Abstract

An analytical model for calculating the minimum drift region length of SOI RESURF diodes is presented with an expression for the maximum breakdown voltage of the device. The minimum drift region length is determined from the condition that the maximum breakdown voltage due to the one-dimensional field along the vertical path equals that of the lateral electric field along the surface. Analytical results agree well with the simulations using PISCES II, and qualitatively with the experimental results.

Keywords

electric breakdown; semiconductor device models; semiconductor diodes; silicon-on-insulator; PISCES II; SOI RESURF diodes; analytical model; lateral electric field; maximum breakdown voltage; minimum drift region length; one-dimensional field; simulations; Analytical models; Diodes; Fabrication; Leakage current; Numerical simulation; Position measurement; Power engineering and energy; Silicon on insulator technology; Thickness measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.475565

Filename

475565