Transmission line analysis of MRAM cell

Author

Park, S. ; Jo, S.

Author_Institution

Soongsil Univ., Seoul, South Korea

Volume

40

Issue

4

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

2089

Lastpage

2091

Abstract

A test configuration of magnetic random access memory (MRAM) unit cell was modeled and its three-dimensional finite element method (FEM) analysis was utilized to calculate S-parameters. Transmission line analysis was performed for word line, bit line and readout signal path. Line width was varied from 0.5 to 2 μm, line thickness from 0.1 to 1 μm, and line length from 200 to 800 μm. The sense signal path was modeled as a composite of transmission lines and RC lumped elements. As the thickness of insulator between the bit and sense lines increased from 50 to 150 nm, 3 dB attenuation frequency was increased by more than 1.7 times due to decreased capacitance between the lines.

Keywords

S-parameters; finite element analysis; random-access storage; transmission lines; 0.1 to 1 micron; 0.5 to 2 micron; 100 nm; 200 to 800 micron; 3D finite element method; 50 nm; FEM analysis; MRAM cell; MRAM unit cell; RC lumped elements; S-parameter calculation; TMR; attenuation frequency; bit line; capacitance; insulator thickness; line length; line thickness; line width varying; magnetic random access memory; readout signal path; sense lines; sense signal path modeling; transmission line analysis; word line; Attenuation; Finite element methods; Insulation; Magnetic analysis; Performance analysis; Random access memory; Scattering parameters; Signal analysis; Testing; Transmission lines; MRAM; Magnetic random access memory; S-parameters; TMR; model; transmission line;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2004.832112

Filename

1325415