Backgating in pseudomorphic In/sub 0.15/Ga/sub 0.85/As/Al/sub 0.25/Ga/sub 0.75/As MODFET´s with a GaAs:Er buffer layer

Author

Sethi, S. ; Mansfield, J. ; Bhattacharya, P.K.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

16

Issue

12

fYear

1995

Firstpage

537

Lastpage

539

Abstract

A new GaAs:Er buffer layer grown by MBE has been developed which significantly reduces backgating currents (by 3 to 4 orders of magnitude) in pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistors (MODFET´s). The buffer layer is highly resistive, in the 10/sup 2/-10/sup 5/ /spl Omega//spl middot/cm range over the Er-doping range investigated. Presence of internal Schottky barriers resulting from high-density ErAs precipitates has been proposed to he the cause of the high resistivity.

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; phototransistors; semiconductor epitaxial layers; semiconductor growth; GaAs:Er; In/sub 0.15/Ga/sub 0.85/As-Al/sub 0.25/Ga/sub 0.75/As; MBE; MODFET; backgating currents; buffer layer; high-density ErAs precipitates; internal Schottky barriers; phototransistors; pseudomorphic modulation-doped field effect transistors; Buffer layers; Conductivity; Density measurement; Erbium; Gallium arsenide; HEMTs; MODFETs; Size measurement; Strain measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.475579

Filename

475579