Title :
High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
Author :
Fresina, M.T. ; Ahmari, D.A. ; Mares, P.J. ; Hartmann, Q.J. ; Feng, M. ; Stillman, G.E.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
We have demonstrated self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT´s) with excellent dc, microwave, and noise performance. A 3×10 μm2 emitter finger device achieved a cutoff frequency of fT=66 GHz and a maximum frequency of oscillation of fmax=109 GHz. A minimum noise figure of 1.12 dB and an associated gain of 11 dB were measured at 4 GHz. These results are the highest combined fT+fmax and the lowest noise figure reported for an InGaP/GaAs HBT and are attributed to material quality and the use of self-aligned base contacts. These data clearly demonstrate the viability of InGaP/GaAs HBT´s for high-speed, low-noise circuit applications.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave field effect transistors; semiconductor device noise; 1.12 dB; 11 dB; 4 to 109 GHz; DC performance; InGaP-GaAs; InGaP/GaAs heterojunction bipolar transistors; emitter finger device; gain; high-speed low-noise circuits; microwave performance; noise figure; self-aligned base contacts; Circuit noise; Contact resistance; Cutoff frequency; Etching; Fingers; Gain; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Noise figure;
Journal_Title :
Electron Device Letters, IEEE
