Title :
Performance of interface engineered SiNx/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET´s
Author :
Sundararaman, C.S. ; Currie, J.F.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech. de Montreal, Que., Canada
Abstract :
SiN/sub x//InP/InGaAs doped channel passivated heterojunction insulated gate field effect transistors (HIGFETs) have been fabricated for the first time using an improved In-S interface control layer (ICL). The insulated gate HIGFETs exhibit very low gate leakage (10 nA@V/sub GS/=/spl plusmn/5 V) and I/sub DS/ (sat) of 250 mA/mm. The doped channel improves the DC characteristics and the HIGFETs show transconductance of 140-150 mS/mm (L/sub g/=2 μm), fT of 5-6 GHz (L/sub g/=3 μm), and power gain of 14.2 dB at 3 GHz. The ICL HIGFET technology is promising for high frequency applications.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium arsenide; indium compounds; insulated gate field effect transistors; microwave field effect transistors; microwave power transistors; passivation; power field effect transistors; silicon compounds; 10 nA; 14.2 dB; 140 to 150 mS/mm; 2 micron; 3 micron; 3 to 6 GHz; DC characteristics; In-S; In-S interface control layer; SHF operation; SiN-InP-In/sub 0.53/Ga/sub 0.47/As-InP; UHF operation; doped channel HIGFET; field effect transistors; heterojunction IGFET; high frequency applications; insulated gate FET; low gate leakage; passivated device; power gain; transconductance; FETs; Frequency; Gain; Gate leakage; Heterojunctions; Indium gallium arsenide; Indium phosphide; Insulation; Silicon compounds; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
