• DocumentCode
    1075024
  • Title

    The reliability of a practical Ga1-xAlxAs laser device

  • Author

    Thompson, Alan

  • Author_Institution
    Hewlett-Packard Research Laboratories, Palo Alto, CA, USA
  • Volume
    15
  • Issue
    1
  • fYear
    1979
  • fDate
    1/1/1979 12:00:00 AM
  • Firstpage
    11
  • Lastpage
    13
  • Abstract
    A GaAlAs DH-laser hybrid device is described that compensates for temperature variations and laser degradation. Lifetesting in a 55°C ambient for over a year yields a projected room-temperature median lifetime of 6 \\times 10^{5} h. Lasers having no aluminum in the active layer have a median lifetime 70 times smaller.
  • Keywords
    Gallium materials/lasers; Semiconductor device reliability; Circuits; Degradation; Diode lasers; Instruments; Laser feedback; Laser modes; Mirrors; Photodiodes; Semiconductor lasers; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1979.1069890
  • Filename
    1069890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075024