DocumentCode
1075046
Title
Structural effect on band-trap-band tunneling induced drain leakage in n-MOSFET´s
Author
Wang, Tahui ; Chang, T.E. ; Huang, C.M. ; Yang, J.Y. ; Chang, K.M. ; Chiang, L.P.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
16
Issue
12
fYear
1995
Firstpage
566
Lastpage
568
Abstract
The structural dependence of the hot carrier stress incurred drain leakage current via band-trap-band tunneling in off-state has been modeled and characterized in conventional S/D, DDD, and LDD n-MOSFET structures. The results shows that lateral field enhanced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in LDD structures while vertical field induced tunneling is dominant in conventional S/D and DDD structures.
Keywords
MOSFET; hot carriers; leakage currents; semiconductor device models; tunnelling; DDD structures; LDD structures; NMOSFET; S/D structures; band-trap-band tunneling; drain leakage current; hot carrier stress; lateral field enhanced tunneling; model; n-MOSFET structures; structural dependence; vertical field induced tunneling; Charge carrier processes; Councils; Electron emission; Electron traps; Hot carriers; Leakage current; MOSFET circuits; Rain; Thermal stresses; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.475589
Filename
475589
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