GaAs MIS solar cells with evaporated tin oxide interfacial layers

GaAs metal-insulator-semiconductor (MIS) solar cells with vacuum-deposited tin oxide interfacial layers have been investigated. Open-circuit voltages of 0.765 V were observed, 62 percent higher than those of cells made without the tin oxide layer. The dependence of open-circuit voltage on interfacial layer thickness indicated a peak at 20-Å width. The results suggest that VOCcould be further improved by reduction of pinhole area in the interfacial layer.