• DocumentCode
    1075278
  • Title

    Charge hysteresis measurements of MOS structures

  • Author

    Kaplan, G.

  • Author_Institution
    The University of New South Wales, Kensington, N.S.W., Australia
  • Volume
    28
  • Issue
    9
  • fYear
    1981
  • fDate
    9/1/1981 12:00:00 AM
  • Firstpage
    1103
  • Lastpage
    1105
  • Abstract
    A method for charge hysteresis investigation in MOS structures is presented, which is based on direct charge measurement using constant current source and time readout.
  • Keywords
    Charge measurement; Circuit simulation; Current measurement; Electrodes; Electron devices; Hysteresis; Implants; Solid state circuits; Threshold voltage; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20495
  • Filename
    1481647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075278