• DocumentCode
    1075301
  • Title

    Nano-oxide layer formed on ruthenium of synthetic pinned-structure spin valve by ion beam and cluster ion beam oxidation

  • Author

    Hu, C.-C. ; Mao, M. ; Devasahayam, A.J. ; Lee, C.L. ; Kools, J.C.S. ; Skinner, W. ; Hautala, J.

  • Author_Institution
    Veeco Instrum., Plainview, NY, USA
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • fDate
    7/1/2004 12:00:00 AM
  • Firstpage
    2203
  • Lastpage
    2205
  • Abstract
    In this paper, we report the performance of bottom synthetic spin-valve films with a newly developed ruthenium (Ru)-based nano-oxide layer (NOL). Two energetic oxidation techniques using an ion beam and a gas cluster ion beam were applied for the formation of the Ru NOL in the synthetic pinned layer. The giant magnetoresistance (GMR) was greatly enhanced from 13.8% to 15.7% with no sign of degradation in the pinning strength. In addition, these Ru NOL-bearing spin-valve films have demonstrated an excellent thermal stability, withstanding repeated thermal annealing cycles at elevated temperatures. This performance is clearly superior to that from the spin-valve films with a conventional CoFe-based NOL. The Ru NOL has shown a great potential for high-amplitude read sensor applications.
  • Keywords
    annealing; giant magnetoresistance; ion beam applications; nanostructured materials; oxidation; ruthenium; spin valves; thermal stability; CoFe-based NOL; Ru-based NOL; bottom synthetic spin valve; cluster ion beam oxidation; energetic oxidation techniques; giant magnetoresistance; nanooxide layer; pinning field; pinning strength; read sensor applications; ruthenium; ruthenium-based nano-oxide layer; spin-valve films; synthetic pinned layer; synthetic pinned-structure spin valve; thermal annealing; thermal stability; Annealing; Argon; Giant magnetoresistance; Instruments; Ion beams; Ion sources; Oxidation; Spin valves; Thermal degradation; Thermal stability; Bottom synthetic spin valve; GCIB; GMR; IBO; NOL; Ru; gas cluster ion beam; giant magnetoresistance; ion beam oxidation; nano-oxide layer; oxidation; pinned layer; pinning field; ruthenium; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2004.829314
  • Filename
    1325453