• DocumentCode
    1075409
  • Title

    High-power and high-speed characteristics of modified heterostructure IRED´s

  • Author

    Ono, Yuuichi ; Mori, Mitsuhiro ; Ito, Kazuhiro ; Kurata, Kazuhiro

  • Author_Institution
    Hitachi Limited, Kokubunji, Tokyo, Japan
  • Volume
    28
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    1183
  • Lastpage
    1187
  • Abstract
    A modified heterostucture Ga1-xAlxAs near infrared emitting diode is described with single (SH) and double heterostructures (DH) adopted for carrier confinement. The active region is arranged in a layer for best crystal quality as shown by photoluminescence measurement. The maximum 3-dB bandwidth is 175 MHz and optical output power reaches 7 mW in a surface emitting diode. The experimental results are compared with optical characteristics for SH and DH IRED´s.
  • Keywords
    Bandwidth; DH-HEMTs; Diodes; Epitaxial layers; High speed optical techniques; Optical pulses; Photoluminescence; Power generation; Stimulated emission; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20508
  • Filename
    1481660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075409