Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors

Author

Wei, Ce-Jun ; Lan, Y. Ellen ; Hwang, C. M James ; Ho, Wu-Jing ; HigginS, J. Aiden

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

Volume

43

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2899

Lastpage

2903

Abstract

A waveform measurement technique has been successfully used to extract the large-signal nonlinear characteristics of microwave power heterojunction bipolar transistors. The extracted model parameters were compared to those extracted from dc and small-signal parameters in a conventional manner. It was found that, for high input drive conditions, the present model predicts a much longer collector transit time than the conventional model. Therefore, the present model is more consistent with the physical structure of the transistors and more suitable for evaluating future design improvement

Keywords

heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; waveform analysis; collector transit time; large-signal nonlinear characteristics; microwave power heterojunction bipolar transistors; waveform-based modeling; Couplers; Current measurement; Data mining; Heterojunction bipolar transistors; Microwave theory and techniques; Microwave transistors; Predictive models; Probes; Scattering parameters; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.475652

Filename

475652