Title :
Influence of synthetic antiferromagnet free layer on current-perpendicular-to-plane spin-valves
Author :
Jiang, Y. ; Abe, S. ; Nozaki, T. ; Tezuka, N. ; Inomata, K.
Author_Institution :
CREST, Japan Sci. & Technol. Corp., Saitama, Japan
fDate :
7/1/2004 12:00:00 AM
Abstract :
We study current-perpendicular-to-plane (CPP) geometrical giant magnetoresistance (GMR) and magnetic switching property for single spin-valves (SVs). Applying a synthetic antiferromagnet (SyAF) instead of a single ferromagnet film as a free layer, the resistance-change area product ΔRA of the SVs is strongly enhanced from ∼ 1.84 mΩ μm2 to ∼ 16.8 mΩ μm2 and the CPP-GMR ratio changes from 0.8% to 3.6%. The study of the magnetic switching behavior by both experiment and single-domain thermal activation modeling shows that the SVs with SyAF as a free layer approaches a single-domain magnet even with a low aspect ratio 1 as long as its size diminishes to ∼0.18 μm2. Because of the single-domain structure, the SVs with SyAF give a size-independent magnetic switching field when the aspect ratio is 1.
Keywords :
antiferromagnetic materials; giant magnetoresistance; magnetic domains; magnetic heads; perpendicular magnetic recording; spin valves; CPP-GMR ratio; current-perpendicular-to-plane spin-valves; ferromagnet film; geometrical giant magnetoresistance; magnetic domains; magnetic switching behavior; magnetic switching property; resistance-change area product; single-domain magnet; size-independent magnetic switching field; synthetic antiferromagnet free layer; thermal activation modeling; Antiferromagnetic materials; Giant magnetoresistance; Iron; Magnetic domains; Magnetic field measurement; Magnetic films; Magnetic heads; Magnetic properties; Magnetic switching; Materials science and technology; GMR; Giant magnetoresistance; SVs; magnetic domains; spin-valves;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2004.830231