Title :
I-1 performance comparison of MOSLSI built using bulk and SOS technology
fDate :
10/1/1981 12:00:00 AM
Keywords :
Annealing; CMOS technology; Electron traps; Isolation technology; Large scale integration; MOS devices; Silicon devices; Solid lasers; Solid state circuits; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20514
