Title :
I-2 shallow silicide contact for shallow junction devices
fDate :
10/1/1981 12:00:00 AM
Keywords :
Alloying; Contacts; Electron emission; Gallium arsenide; Hot carriers; Impact ionization; Large scale integration; Schottky barriers; Silicides; Silicon alloys;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20516
