DocumentCode

1075489

Title

I-2 shallow silicide contact for shallow junction devices

Author

Tu, K.N.

Volume

28

Issue

10

fYear

1981

fDate

10/1/1981 12:00:00 AM

Firstpage

1208

Lastpage

1208

Keywords

Alloying; Contacts; Electron emission; Gallium arsenide; Hot carriers; Impact ionization; Large scale integration; Schottky barriers; Silicides; Silicon alloys;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1981.20516

Filename

1481668