Title :
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET´s
Author :
Filicori, Fabio ; Vannini, Giorgio ; Santarelli, Alberto ; Sanchez, A.M. ; Tazon, A. ; Newport, Yolanda
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
fDate :
12/1/1995 12:00:00 AM
Abstract :
The modeling of low-frequency dispersive effects due to surface state densities, deep level traps and thermal phenomena plays an important role in the large-signal performance prediction of III-V FET´s. This paper describes an empirical modeling approach to accurately predict deviations between static and dynamic drain current characteristics caused by dispersive effects in III-V devices operating at microwave frequencies. It is based on reasonable assumptions and can easily be embedded in nonlinear FET models to be used in Harmonic-Balance tools for circuit analysis and design. Experimental and simulated results, for HEMT´s and GaAs MESFET´s of different manufacturers, that confirm the validity of the new approach, are presented and discussed together with the characterization procedures required
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; equivalent circuits; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; surface states; GaAs; HEMT; III-V FET; MESFET; characterization procedures; deep level traps; dynamic drain current characteristics; empirical modeling; harmonic-balance tools; large-signal performance prediction; low-frequency dispersive effects; microwave frequencies; nonlinear FET models; static drain current characteristics; surface state densities; thermal phenomena; Circuit analysis; Circuit simulation; Dispersion; Gallium arsenide; HEMTs; III-V semiconductor materials; MESFETs; Microwave FETs; Microwave frequencies; Predictive models;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
