DocumentCode :
1075549
Title :
IIA-4 a high gain In
0.53
Ga
0.47
As/InP avalanche photodiode with no tunneling leakage current
Author :
Forrest, Stephen R. ; Kim, O.K. ; Bonner, W.A. ; Smith, R.G. ; Williams, G.F.
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1212
Lastpage :
1212
Keywords :
Avalanche photodiodes; Dark current; Electric breakdown; Indium phosphide; Optical noise; Optical receivers; Optical sensors; P-i-n diodes; Photoconductivity; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20522
Filename :
1481674
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1075549
