Title :
IIB-3 doping gradient effects on short-channel MOSFET voltage limitations
fDate :
10/1/1981 12:00:00 AM
Keywords :
Breakdown voltage; Doping profiles; EPROM; Electric breakdown; FETs; Finite element methods; MOSFET circuits; Physics; Secondary generated hot electron injection; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20527
