Title :
IIB-4 a unified device model for a short channel MOSFET
Author_Institution :
Bell Laboratories, Murray Hill, NJ
fDate :
10/1/1981 12:00:00 AM
Keywords :
Analytical models; Boundary conditions; Current measurement; Doping; Electrons; MOSFET circuits; Physics; Semiconductor process modeling; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20529
