• DocumentCode
    1075630
  • Title

    IIB-6 computer simulation of electron transport in "Ballistic" diodes

  • Author

    Frey, Jesse

  • Volume
    28
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    1218
  • Lastpage
    1219
  • Keywords
    Boundary conditions; Computer simulation; Diodes; Electrons; Gallium arsenide; MESFETs; Semiconductor process modeling; Silicon; Steady-state; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20530
  • Filename
    1481682