Title :
IIB-5 a charge conserving capacitor model for VLSI MOSFET circuit simulation
Author :
Yang, Ping ; Epler, B. ; Chatterjee, Parag
fDate :
10/1/1981 12:00:00 AM
Keywords :
Capacitance; Circuit simulation; Electrons; MOS capacitors; MOSFET circuits; Physics; Predictive models; Switched capacitor circuits; Very large scale integration; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20531
