Title :
On-the use of IGBT-gated GTO-cascode switches in quasi-resonant converters
Author :
Tak-Kei Chan ; Morcos, Medhat M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA
Abstract :
The gate turn-off (GTO) thyristor has the highest voltage and current rating among the semiconductor power switches used extensively today. This paper documents the use of an insulated gate bipolar transistor (IGBT) to improve switching performance of a GTO in a cascode switch. The IGBT-gated GTO-cascode switch features simple drive requirement, fast switching, robustness, and overcurrent protection. The cascode switch was applied in a quasi-resonant buck converter and simulated on a computer using PSPICE. Results indicate that IGBT-gated GTO-cascode switches are promising candidates for high-power and high-frequency applications
Keywords :
DC-DC power convertors; SPICE; circuit analysis computing; insulated gate bipolar transistors; overcurrent protection; power semiconductor switches; protection; resonant power convertors; switching circuits; thyristor convertors; IGBT-gated GTO-cascode switches; PSPICE; computer simulation; fast switching; gate turn-off thyristor; high-frequency; high-power; insulated gate bipolar transistor; overcurrent protection; quasi-resonant buck converter; quasi-resonant converters; robustness; semiconductor power switches; turn-off characteristics; turn-on characteristics; Buck converters; Computational modeling; Computer simulation; Insulated gate bipolar transistors; Power semiconductor switches; Protection; Robustness; SPICE; Thyristors; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
