DocumentCode
1075700
Title
IIIA-4 a comparison of temperature dependence of lasing characteristics of 1.3 µm InGaAsP and GaAs DH lasers
Author
Dutta, N.K. ; Nelson, R.J.
Volume
28
Issue
10
fYear
1981
fDate
10/1/1981 12:00:00 AM
Firstpage
1222
Lastpage
1223
Keywords
Charge carrier lifetime; DH-HEMTs; Gallium arsenide; Optical materials; Radiative recombination; Spontaneous emission; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20537
Filename
1481689
Link To Document