DocumentCode
1075792
Title
IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy
Author
McFee, J.H. ; Swartz, R.G. ; Voshchenkov, A.M. ; Feldman, L.C. ; Ota, Yoshiharu
Volume
28
Issue
10
fYear
1981
fDate
10/1/1981 12:00:00 AM
Firstpage
1228
Lastpage
1229
Keywords
Boron; Doping; Ion sources; Molecular beam epitaxial growth; Plasma applications; Plasma immersion ion implantation; Plasma sources; Plasma temperature; Silicon; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20546
Filename
1481698
Link To Document