DocumentCode :
1075792
Title :
IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy
Author :
McFee, J.H. ; Swartz, R.G. ; Voshchenkov, A.M. ; Feldman, L.C. ; Ota, Yoshiharu
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1228
Lastpage :
1229
Keywords :
Boron; Doping; Ion sources; Molecular beam epitaxial growth; Plasma applications; Plasma immersion ion implantation; Plasma sources; Plasma temperature; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20546
Filename :
1481698
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1075792
