DocumentCode
1075802
Title
IIIB-6 power devices with Ga implanted base
Author
Ajima, Toshiyuki ; Ohshima, J. ; Kirita, K. ; Yonezawa, Teru
Volume
28
Issue
10
fYear
1981
fDate
10/1/1981 12:00:00 AM
Firstpage
1229
Lastpage
1230
Keywords
Fabrication; Gallium; Laboratories; Microwave devices; Molecular beam epitaxial growth; Nitrogen; Schottky diodes; Semiconductor device manufacture; Semiconductor films; Semiconductor impurities;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20547
Filename
1481699
Link To Document