Title :
Switching reliability improvement of phase change memory with nanoscale damascene structure by Ge2Sb2Te5 CMP process
Author :
Zhong, M. ; Song, Z.T. ; Liu, B. ; Wang, L.Y. ; Feng, S.L.
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
Phase change memory with nanoscale damascene structure was successfully fabricated by Ge2Sb2Te5 (GST) film chemical mechanical polishing (CMP) process. An ultra-smooth surface reduced the GST/TiN contact resistance, and more homogeneous GST material composition distribution caused by the damascene structure made GST sheet resistance steady. Thus, switching reliability of the device was improved greatly compared with that of the device without CMP process owing to the reduction of device resistance fluctuation.
Keywords :
antimony compounds; chemical mechanical polishing; germanium compounds; phase change materials; tellurium compounds; Ge2Sb2Te5; chemical mechanical polishing; damascene structure; device resistance fluctuation; material composition distribution; nanoscale damascene structure; phase change memory; sheet resistance; switching reliability improvement; ultrasmooth surface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082906
