DocumentCode :
1075869
Title :
IVA-4 high field transport in GaAs-Al
x
Ga
1-x
As heterojunction layers
Author :
Keever, M. ; Drummond, Tom ; Morkoc, H. ; Hess, K. ; Streetman, B.G.
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1233
Lastpage :
1233
Keywords :
Current-voltage characteristics; Electric resistance; Electrons; Gallium arsenide; Gold; Gunn devices; Heterojunctions; Photonic band gap; Surface cleaning; Surface resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20553
Filename :
1481705
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1075869
