Title :
IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates
Author :
Matsunami, H. ; Nishino, S. ; Ono, H.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Buffer layers; Chemical vapor deposition; Crystals; Degradation; Electron mobility; Silicon carbide; Sputtering; Substrates; Temperature sensors; X-ray diffraction;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20556
