Title :
IVA-7 surface layer impurity accumulation due to evaporation of GaAs during annealing
Author :
Woodall, J. ; Wicks, G. ; Rupprecht, H.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Annealing; Chemical vapor deposition; Crystals; Electron mobility; Gallium arsenide; Impurities; Silicon carbide; Substrates; Surface morphology; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20557
