Power dissipation in class B amplifiers

A linear treatment is developed which will predict the conversion efficiency, power output, and power dissipation for sinusoidal Class B push-pull operation of an imperfect device such as a silicon power transistor. Normalized expressions for conversion efficiency, power outputs, and power dissipation as functions of the ratio of load to dc saturation resistance are determined. The results are of particular interest to amplifier designers. Limiting cases are considered in order to indicate the established expressions for the ideal device. Calculated and measured data agree well enough to justify the use of the theory for practical purposes.