DocumentCode

1075927

Title

IVB-2 characterization of tunneling in ultra-thin oxide MOS devices

Author

Chang, Carole ; Brodersen, R.W.

Volume

28

Issue

10

fYear

1981

fDate

10/1/1981 12:00:00 AM

Firstpage

1237

Lastpage

1237

Keywords

Breakdown voltage; Current measurement; Effective mass; Equations; Laboratories; MOS capacitors; MOS devices; MOSFETs; Silicon compounds; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1981.20559

Filename

1481711