Title :
IVB-2 characterization of tunneling in ultra-thin oxide MOS devices
Author :
Chang, Carole ; Brodersen, R.W.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Breakdown voltage; Current measurement; Effective mass; Equations; Laboratories; MOS capacitors; MOS devices; MOSFETs; Silicon compounds; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20559
