• DocumentCode
    1075936
  • Title

    Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

  • Author

    Dupuis, Russell D. ; Dapkus, P.Daniel

  • Author_Institution
    Rockwell International, Anaheim, CA, USA
  • Volume
    15
  • Issue
    3
  • fYear
    1979
  • fDate
    3/1/1979 12:00:00 AM
  • Firstpage
    128
  • Lastpage
    135
  • Abstract
    Recently Ga1-xAlxAs-GaAs double-heterostructure lasers having low threshold current densities have been grown by metalorganic chemical vapor deposition. In addition to these conventional double-heterostructure lasers, unique laser structures have been grown, e.g., channel-guide, distributed-Bragg-confinement, and single- and multiple-quantum-well lasers. We describe here the preparation and performance of these devices.
  • Keywords
    Gallium materials/lasers; Semiconductor growth; Aluminum alloys; Chemical lasers; Chemical vapor deposition; DH-HEMTs; Doping; Epitaxial layers; Heterojunctions; Hydrogen; Threshold current; Transistors;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1979.1069974
  • Filename
    1069974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075936