Title :
IVB-3 Fowler-Nordheim tunneling in MIS structures
Author :
Krieger, Gerhard ; Swanson, Richard M.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Breakdown voltage; Capacitors; Charge coupled devices; Current measurement; Electrons; Laboratories; Nonvolatile memory; Silicon; Tunneling; Writing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20560
