Title :
IVB-7 direct observation of lateral redistribution profiles of shallow ion implants
Author :
Roitman, P. ; Myers, D.R. ; Wilson, Roland ; Garvin, H.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Amorphous materials; Annealing; Etching; Gettering; Implants; MOSFETs; Oxygen; Scanning electron microscopy; Silicon; Transmission electron microscopy;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20564
